C106B2 c106d2 c106m2 sensitive gate silicon controlled rectifier 4 amp, 200 thru 600 volts description: the central semiconductor C106B2 series types are 4.0a, pnpn sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200v to 600v. these devices are designed for applications such as temperature, light and speed control, and remote warning and triggering applications. marking: full part number maximum ratings: (t c =25c unless otherwise noted) symbol C106B2 c106d2 c106m2 units peak repetitive off-state voltage v drm , v rrm 200 400 600 v rms on-state current (t c =85c) i t(rms) 4.0 a peak one cycle surge current, t=8.3ms i tsm 20 a i 2 t value for fusing i 2 t 1.65 a 2 s peak gate power dissipation (t c =80c) p gm 0.5 w average gate power dissipation (t c =80c) p g(av) 0.1 w peak forward gate current (t c =80c) i gfm 0.2 a operating junction temperature t j -40 to +110 c storage temperature t stg -40 to +150 c thermal resistance jc 7.5 c/w thermal resistance ja 80 c/w electrical characteristics: (t j =25c unless otherwise noted) symbol test conditions min typ max units i drm , i rrm rated v drm , v rrm , r gk =1.0k 10 a i drm , i rrm rated v drm , v rrm , r gk =1.0k, t j =110c 100 a v tm i t =4.0a 2.2 v i gt v d =6.0v, r l =100 200 a i gt v d =6.0v, r l =100, t j =C40c 500 a v gt v d =6.0v, r l =100 0.4 0.8 v v gt v d =6.0v, r l =100, t j =C40c 0.5 1.0 v i h v d =12v 3.0 ma i h v d =12v, t j =C40c 6.0 ma i h v d =12v, t j =110c 2.0 ma i l v d =12v 5.0 ma i l v d =12v, t j =C40c 7.0 ma dv/dt v d =rated v drm , r gk =1.0k, t j =110c 8.0 v/s to-202-2 thyristor case r0 (15-february 2011) www.centralsemi.com
C106B2 c106d2 c106m2 sensitive gate silicon controlled rectifier 4 amp, 200 thru 600 volts lead code: 1) cathode 2) anode 3) gate tab is common to pin 2 marking: full part number to-202-2 thyristor case - mechanical outline www.centralsemi.com r0 (15-february 2011)
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